oxide silicon wafer

详情

Our factroy can manufacture the 3",4",6" oxide IC silicon wafer with high quality and compeitive price.
Grade Prime
Growth Method    CZ/FZ
Conductivity Type   P type or N type   
Dopant        P,B,AS
Resistivity:    0.**1 - 1ohm-cm , 1 - ***0 ohm-cm
FZ(>***0ohm-cm)
thickness: customization
oxide layer thickness:customization
Crystal orientation  <**0> ,<**1>,<**0>
surface: no scratch, no saw mark, no chip, no stain
single/double side polished
packing Aluminum foil vacuum packing        
particle <*0 & 0.3um
roughness:<0.5nm
TTV < 4um
TIR < 4um
bow < *0um
warp < *0um
EPD < **0
qty *5pcs/cassette