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HF/VHF power MOS transistor

HF/VHF power MOS transistor **----BLF175 Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applicatio

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HF/VHF power MOS transistor

HF/VHF power MOS transistor**----BLF177 designed for industrial and military applications in the HF/VHF frequency range.

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RF Power Field Effect Transistor N-Channel Enhancement -Mode MOSFETs

RF Power Field Effect Transistor N-Channel Enhancement -Mode MOSFETs**----MRF154 Specified 50 Volts , 30MHz Characteristics

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VHF BAND POWER AMPLIFIER APPLICATIONS

TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ***---2SC2782A**----VHF BAND POWER AMPLIFIER APPLICATIONS

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Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 860 MHz

Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 860 MHz*----PTFA**3002E;intended for analog and digital broadcast, including 8VSB and COFD

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RF POWER TRANSISTORS

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs*----SD2933 It is intended for use in 50 V DC large signal applications up to 150 MHz

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RF POWER TRANSISTORS

RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs *----SD2931 is intended for use in 50V dc large signal applications up to 230 MHz

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Silicon MOSFET Power Transistor 30MHz, 70W

RF POWER MOS FET--RD70HHF1--Silicon MOSFET Power Transistor 30MHz, 70W is a MOS FET type transistor specifically designed for HF High power amplifie

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RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE **----ARF1501 is an RF power transistor designed for very high power scientific, commercial , medical and

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Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 1990 MHz

Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 1990 MHz **----PTFA**2001E intended for single- and two-carrier WCDMA and CDMA application

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RF POWER VERTICAL MOSFET

RF POWER VERTICAL MOSFET**----VRF150MP is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military app

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1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz

1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz *----TPR1000 ; designed for pulsed systems in the frequency band 1090 MHz.

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X-Band Internally Matched FET

X-Band Internally Matched FET**----FLM***6-15F ; is a power GaAs FET that is internally matched for standard communication bands to provide optimum

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The RF MOSFET Line RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs**----MRF373

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RF Power Field Effect Transistor NChannel EnhancementMode Lateral MO

RF Power Field Effect Transistor N Channel Enhancement Mode Lateral MOSFET *---- MRF1513NT1 ;Excellent Thermal Stability

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    联系人: Eva

    公司名称:AMA Technology Co., Ltd ( Southern Electronics Tech Ltd )

    办公地址:Hua qiang Road, Shenzhen, Guangdong,518031

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