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联系人 Mr. walliam
pudong, shanghai, shanghai
Our factory can maufacture the IC grade 1"2"3 inch silicon wafer
Growth Method CZ
Conductivity Type P/N
Dopant P,B,AS
Resistivity: 0.**1 - 1ohm-cm , 1 - ***0
ohm-cm
thickness: customization
Crystal orientation: <**0> <**1>
surface: no scratch, no saw mark, no chip, no stain
single/double polished
packing Aluminum foil vacuum
packing
particle <*0 & 0.3um
TTV < 4um
TIR < 4um
bow < 4um
qty *5pcs
