ceramic packages,Microwave Device Packages,GaAs , GaN microwave
device package The package is made of metal wall,metal base and multilayered ceramic feedthrough withthe features of excellent reliability,low translation loss and high shielding performace ,the highest frequency up to Ka band. The packages can be used in RF power device and moudle packaging, HIC,MMIC, packaging with excellent impedance matching and low insertion loss,the power can up to **0 W,frequency up to *0GHZ. It is suitable for silicon power transistor, LDMOS devices,GaAs and GaN power deviceds packaging .
