ic electronic components IRF5803TRPBF

详情

These P-channel HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP*6 package with its customized leadframe produces a HEXFET� power MOSFET with RDS(on) *0% less than a similar size SOT**3. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly **0% compared to the SOT**3.