Rapid Thermal Processing in LEDs

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AccuThermo AW **0 is the best production solution for Rapid Thermal Process for LED 2 inch ***** can process *6 pieces of 2 inch wafer per ***** throughput per hour can be up to **0 pieces 2 inch ***** is time to use AccuThermo AW **0 instead of the original Furnace for production in LED industry due to the following. Much better uniformity Much better repeatability Much better stability Shorter time and lower thermal capacity Small footprint and energy efficiency Some information on the Rapid Thermal Process in LED Ion implantation doping and isolation coupled with rapid thermal annealing has played a critical role in the realization of high performance photonic and electronic devices in all mature semiconductor material systems. This is also expected to be the case for the binary III-V nitrides (InN, GaN, and A1N) and their alloys as the epitaxial material quality improves and more advanced device structures are fabricated. In "Ion implantation and rapid thermal processing of Ill-V nitrides" reviews the recent developments in implant doping and isolation along with rapid thermal annealing of GaN and the In-containing ternary alloys InGaN and InAlN. In particular, the successful n- and p-type doping of GaN by ion implantation of Si and Mg+P, respectively, and subsequent high temperature rapid thermal anneals in excess of ***0°C is reviewed. In the area of implant isolation, N-implantation has been shown to compensate both n- and p-type GaN, N-, and O-implantation effectively compensates InAlN, and InGaN shows limited compensation with either N- or F-implantation. The effects of rapid thermal annealing on unimplanted material are also presented.