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GaAs wafer

GaAs wafer

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联系人 Mr. walliam

pudong, shanghai, shanghai

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GaAs wafer
Diameter *0.8+/*0.5mm, *2.5+/*0.5mm,*6.3+/*0.5mm
growth method VGF / LEC /CZ
Type N(si)/P(Te)
Orientation **0/**1
thickness: customization
resistivity customization
surface SSP/DSP
roughness < 0.5nm
OF(IF) *6+/*1mm(7+/*1mm)
super cleaning(**0 grade) Packaging vacuum packing

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Mr. walliam < Jin He electron material company >

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