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Minimum Order
位置:
China
最小订单价格:
-
最小订单:
100 Piece
包装细节:
-
交货时间:
-
供应能力:
10000 Piece per Day
付款方式:
T/T
联系人 Mr. songhao
RM3022, Nan Guang Jie Jia Building, 3037 Shennan Road, Futian District, Shenzhen, Guangdong
The ISSI IS*2WV***8ALL / IS*2WV***8BLL are high-
speed,4Mbit static RAMs organized as **2K words by 8
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1 is HIGH (deselected) the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS*2WV***8ALL and IS*2WV***8BLL are packaged
in the JEDEC standard **-pin TSOP (TYPE I), **-pin
sTSOP (TYPE I), **-pin TSOP (Type II), **-pin SOP and
**-pin mini BGA.
FEATURES
•High-speed access time: *5ns, *0ns
•CMOS low power operation
*6 mW (typical) operating
9 µW (typical) CMOS standby
•TTL compatible interface levels
•Single power supply
1.*5V – 2.2V VDD (IS*2WV***8ALL)
2.5V – 3.6V VDD (IS*2WV***8BLL)
•Fully static operation: no clock or refresh
required
•Three state outputs
•Industrial temperature available
•Lead-free available
