• Package with insulated metal base plate
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE ***0 V
Collector-gate voltage
RGE = *0 kW
VCGR
***0
Gate-emitter voltage VGE ± *0
DC collector current
TC = *5 °C
TC = *0 °C
IC
**0
**0
A
Pulsed collector current, t
p
= 1 ms
TC = *5 °C
TC = **5 °C
ICpuls
**0
***0
Power dissipation per IGBT
TC = *5 °C
Ptot
***0
W
Chip temperature Tj + **0 °C
Storage temperature Tstg
**0 ... + **5
Thermal resistance, chip case RthJC £ 0.**5 K/W
Diode thermal resistance, chip case RthJCD £ 0.*9
Insulation test voltage, t = 1min. Vis
***0 Vac
Creepage distance - *0 mm
Clearance - *1
DIN humidity category, DIN *0 **0 - F sec
IEC climatic category, DIN IEC ***1 - *0 / **5 / *6
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