详情
*4M x 8 Bits NAND Flash Memory
FEATURES
• Voltage Supply
- 1.8V Device(K9F***8R0C) : 1.*5V ~ 1.*5V
- 2.7V Device(K9F***8B0C) : 2.5V ~ 2.9V
- 3.3V Device(K9F***8U0C) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (*4M + 2M) x 8bits
- Data Register : (**2 + *6) x 8bits
• Automatic Program and Erase
- Page Program : (**2 + *6) x 8bits
- Block Erase : (*6K + **2)Bytes
• Page Read Operation
- Page Size : (**2 + *6)Bytes
- Random Access : *5µs(Max.)
- Serial Page Access : *2ns(Min.)
• Fast Write Cycle Time
- Program time : **0µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
*4M x 8 Bits NAND Flash Memory
• Reliable CMOS Floating-Gate Technology
- Endurance : **0K Program/Erase
Cycles
(with 1bit/**2Byte ECC)
- Data Retention : *0 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package
- K9F***8U0C-PCB0/PIB0 : Pb-Free Package
*8 - Pin TSOP I (*2 x *0 / 0.5 mm pitch)
- K9F***8X0C-JCB0/JIB0: Pb-Free Package
**-Ball FBGA(8.5 x *3 x 1.2mmt)
- K9F***8B0C-PCB0/PIB0 : Pb-Free Packag
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