Package:TO***0/**0F
Vds: **0V
Id: 2.0A
Rds: 5.0ohm
PD:*0W
It can replace of FQP2N*0(FS)
This power MOSFET is produced with advanced VDMOS technology of
SAMWIN. This technology enables power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent avalanche
characteristics. It's usually used at high efficient DC to DC
converter block and SMPS, it's typical application is TV and
monitor.
