详情
Name:
CGHV****0F2 - ***-W, 7.9 9.*-GHz, **-ohm, Input/Output-Matched, GaN
HEMT Power Amplifier Cree/Wolf Speed
Conditions:
New and Original, Ready to ship (**0 pcs), Available in warehouse
out of US, ITAR Free and not need License Export for customer (My
company filled license export and got it from US and Cree for
project, these quantity is extra for my needs, so I can easily ship
to customers)
Description:
Wolfspeeds CGHV****0F2 is a gallium-nitride (GaN)
high-electron-mobility transistor (HEMT) on silicon-carbide (SiC)
substrates. This GaN internally matched (IM) FET offers excellent
power added efficiency in comparison to other technologies. GaN has
superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift
velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to GaAs
transistors. This IM FET is available in a metal/ceramic flanged
package for optimal electrical and thermal performance.
Application:
Semiconductors, Discrete Semiconductors, Transistors, RF
Transistors, RF JFET Transistors, X-Band, Wolfspeed / Cree
CGHV****0F2
X-Band Radar Transistor - RF MOSFET
HEMT - Cree\'s Gallium Nitride (GaN) transistors and MMICs for
X-Band radar power amplifiers
