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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET
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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET
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FLL357ME Fujitsu FLL357 L-Band RF Power Transistor Medium High Power GaAs FET

离岸价格

获取最新报价

45 ~ 50 USD / Piece

|

10 Piece Minimum Order

国家:

China

型号:

FLL357ME

离岸价格:

45 ~ 50 USD / Piece 获取最新报价

位置:

Shenzhen China

最小订单价格:

45 per Piece

最小订单:

10 Piece

包装细节:

Vaccum plastic Pack

交货时间:

7 days FOB Shenzhen

供应能力:

1000 Piece per Month

付款方式:

T/T, Western Union, PayPal

產品組 :

IC

现在联系
Shenzhen Yuanlong Microwave Electronics Co., Ltd.

Shenzhen Yuanlong Microwave Electronics Co., Ltd.

China

免费会员

联系人 Mr. Yuanlong

19B hangdu mansion huafu road futian district, Shenzhen, Guangdong

现在联系

详情

Model No. :    FLL357ME   L357

Description : The FLL351ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices.

Features   
High Output Power: P1dB=35.5dBm (Typ.)
High Gain: G1dB=11.5dB (Typ.)
High PAE: ηadd=46% (Typ.)
Proven Reliability
Hermetically Sealed Package
Brand : Fujitsu
image

国家: China
型号: FLL357ME
离岸价格: 45 ~ 50 / Piece 获取最新报价
位置: Shenzhen China
最小订单价格: 45 per Piece
最小订单: 10 Piece
包装细节: Vaccum plastic Pack
交货时间: 7 days FOB Shenzhen
供应能力: 1000 Piece per Month
付款方式: T/T, Western Union, PayPal
產品組 : IC

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