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MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors
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MRFE6S9160HSR3 MRFE6S9160HR3 MRFE6S9160HS N-channel Enhancement Mode Lateral MOSFETs RF Power Field Effect Transisitors

离岸价格

获取最新报价

20 ~ 30 USD / Unit

|

10 Unit Minimum Order

国家:

China

型号:

MRF7S38075HS

离岸价格:

20 ~ 30 USD / Unit 获取最新报价

位置:

Shenzhen China

最小订单价格:

20 per Unit

最小订单:

10 Unit

包装细节:

Tape and Reel

交货时间:

1-3 Days FOB Shenzhen

供应能力:

2000 Unit per Week

付款方式:

T/T, Western Union, PayPal

產品組 :

IC

现在联系
Shenzhen Yuanlong Microwave Electronics Co., Ltd.

Shenzhen Yuanlong Microwave Electronics Co., Ltd.

China

免费会员

联系人 Mr. Yuanlong

19B hangdu mansion huafu road futian district, Shenzhen, Guangdong

现在联系

详情

Product Descriprtion:
Model No. MRFE6S***0HSR3 / MRFE6S***0HR3 / MRFE6S***0HS 
Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from **5 to **0 MHz. Suitable for multicarrier amplifier applications.
Typical Signal-Carrier N-CDMA. *@********************, IDQ=***0mA, Pout=*5 Watts Avg., IS**5 CDMA(Pilot, Sync, Paging, Traffic Code 8 Through *3)  Channel Bandwidth= 1.***8 MHz. PAR=9.8 dB

国家: China
型号: MRF7S38075HS
离岸价格: 20 ~ 30 / Unit 获取最新报价
位置: Shenzhen China
最小订单价格: 20 per Unit
最小订单: 10 Unit
包装细节: Tape and Reel
交货时间: 1-3 Days FOB Shenzhen
供应能力: 2000 Unit per Week
付款方式: T/T, Western Union, PayPal
產品組 : IC

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