Crees CGHV****0F2 is a gallium nitride (GaN) High Electron Mobility
Transistor
(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally
Matched (IM) FET
offers excellent power added efficiency in comparison to other
technologies. GaN
has superior properties compared to silicon or gallium arsenide,
including higher
breakdown voltage, higher saturated electron drift velocity and
higher thermal
conductivity. GaN HEMTs also offer greater power density and wider
bandwidths
compared to GaAs transistors. This IM FET is available in a
metal/ceramic flanged
package for optimal electrical and thermal performance.
| Parameter | 8.4 GHz | 8.8GHz | 9.0GHz | 9.2GHz | 9.4GHz | 9.6GHz | units |
| linear power | *3.8 | *2.8 | *2.3 | *2.3 | *2.2 | *1.8 | dB |
| output power | *5 | *7 | *1 | *2 | *5 | *5 | W |
| power gain | *0.4 | 9.9 | *0.1 | *0.1 | 9.8 | 9.8 | dB |
| power added efficiency | *7 | *4 | *2 | *4 | *8 | *5 | % |
| Features | Application |
| 8.**9.6 GHz Operation | Marine Radar |
| *0WPOUT typical | Weather Monitoring |
| *0dB Power Gain | Air Traffic Control |
| *5% Typical PAE | Maritime Vessel Traffic Control |
| *0 Ohm Internally Matched | Port Security |
| <0.1 dB Power Droop |
| 国家: | China |
| 型号: | - |
| 离岸价格: | 750 ~ 750 / ( Negotiable ) 获取最新报价 |
| 位置: | - |
| 最小订单价格: | 750 |
| 最小订单: | 10 Piece |
| 包装细节: | - |
| 交货时间: | - |
| 供应能力: | - |
| 付款方式: | T/T, Other |
| 產品組 : | - |
