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    Product parameters: Category: MOSFET Package type: TO***7 Type: Single N Vdss: *0V, *0V, *0V, **0V, **5V, **5V, **0V, **0V, **0V... ID: **0A **0A Tc *5 Pd: **0W **0W Tc *5 Rdson: 1mR 7mR, more ...
    Product parameters: Category MOSFET Package Type PDFN8L 5x6 Type Single-N Vdss *0V ID **0A Tc *5 Pd **9W Tc *5 Rdson Vgs RDS ON 1.3 m typ. VGS *0V RDS ON 2.0 m typ. VGS ...
    Product parameters: Category MOSFET Package TO*****6L Type Single-N Vdss **0V ID **2A Tc *5 Pd **5W Tc *5 Rdson Vgs, ID RDS ON 1.5m typ. VGS *0V Vth 3V **0uA Marking information:...
    Product parameters: Category MOSFET Package TOLL Type Single-N Vdss **0V ID **0A Tc *5 Pd **8.5W Tc *5 Rdson Vgs 1.*5mR typ. VGS *0V Vth 3V **0uA Marking information: LOGO ...
    Crees CGHV****0F2 is a gallium nitride GaN High Electron Mobility Transistor HEMT on Silicon Carbide SiC substrates. This GaN Internally Matched IM FET offers excellent power added effici...
    This product is also available on Amazon for retail. More Detail
    Crees CGHV****0F2 is a gallium nitride GaN High Electron Mobility Transistor HEMT on Silicon Carbide SiC substrates. This GaN Internally Matched IM FET offers excellent power added e...
    This product is also available on Amazon for retail. More Detail
    The device is mainly applied for the pre-heating processing for thermo-set resin material such as melamine, epoxy molding compound, bakelite and urea formaldehyde molding powder, etc., including pr...
    IR MOSFET N-CH **0V *7.4A TO**4AA N-Channel **0 V *7.4A Tc 4W Ta , **0W Tc Through Hole TO***4AA JANTX1N***4 JANTX1N***6 JANTX1N***6US JANTX1N**9UR*1 JANTX1N***1 JANTX1N***6US JANTX1N**2...

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    Din-Tek Semiconductor was established in ***9, focusing on the field of MOSFET and IGBT. The company is engaged in the design, sale, and manufacturing of MOSFET and IGBT. The products cover VD MOS,...
    P/N DTK**0N*0 Package TO***3 VDS V **0 VGS V *0 VGS th V 4 RDS ON m at VGS *0V *7 ID A **0 Supplier Din-Tek Semiconductor Lead time **6 weeks VGS V
    P/N DTP***5 Package TO***0 Type Single N Channel VDS V *5 VGS V *0 VGS th V 2 RDS ON m at VGS 4.5V 7.1 RDS ON m at VGS *0V 6.3 ID A **0 Please contact us...
    General description *0W plastic LDMOS power transistor for base station applications at frequencies from **0 MHz to ***0 MHz. Model NO. :BLF7G*2LS***0P Instock: ***0 units Features and benefits ...
    Product Description: This **7W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range **0 to **0 MHz. Model No. : nbs...
    PRODUCT DESCRIPTION The TCC***0 SD***6 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF an...
    Product Description: Model No.: UF***0P Inctock: **0 units Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broad...
    Product Descrition: The RF Line Microwave Pulse Power Transistor is designed for *******0 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters....
    Product Description The RF MOSFET Line RF Power Field-Effect Transistor NChannel EnhancementMode MRF**4 is designed for wideband largesignal amplifier and oscillator...
    Product Description: Model No. : PH*******0 Instock: **0 units Features NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation High Effi...
    Product Description Model No.: MS***2W Instock: ***0 units RF POWER TRANSISTOR Packaging: High Frequency Tubes Min. working temperature: **0 Max. working temperature: *0 Min. supply ...
    AE AE*******4 A AE*******4 AE RF Power MODULE APEX Professional one station high-frequency tube, RF. Microwave Amplifier Model No.: AE*******0...
    Optical Modules are electronic components that convert an electrical signal to an optical signal simultaneously. Optical Modules are categorized into LD Laser Diode Modules and PD Photo Diode M...

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