联系人 Kate
Quanzhou, Fujian
A ***0 W extremely rugged LDMOS power transistor for broadcast and
industrial
applications in the HF to **0 MHz band. This product is an enhanced
version of the
BLF**8 using NXP's XR process to provide maximum ruggedness
capability in the most
severe applications without compromising the RF performance.
| 国家: | China |
| 型号: | - |
| 离岸价格: | 获取最新报价 |
| 位置: | - |
| 最小订单价格: | - |
| 最小订单: | 1 |
| 包装细节: | - |
| 交货时间: | - |
| 供应能力: | - |
| 付款方式: | - |
| 產品組 : | - |
