离岸价格
获取最新报价|
- Minimum Order
国家:
Hong Kong
型号:
IRG4BC30FDPBF
离岸价格:
位置:
UNITED STATES
最小订单价格:
-
最小订单:
-
包装细节:
Original packing(pack in tube, box)
交货时间:
IN STOCK, SHIP WITHIN 1 DAY
供应能力:
8500 Piece per Month
付款方式:
-
產品組 :
联系人 Mr. Eric
RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG, HONGKONG
The IRG4BC*0FDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode.
IRG4BC*0FDPBF absolute maximum ratings: (1)collector-to-emitter voltage: **0 V; (2)continuous collector current: *1 A; (3)pulsed collector current: **4 A; (4)clamped inductive load current: **4 A; (5)diode continuous forward current: *2 A; (6)diode maximum forward current: **0 A; (7)gate-to-emitter voltage: ±*0 V; (8)maximum power dissipation: **0 W; (9)operating junction and storage temperature range: **5 to ***0 ℃.
IRG4BC*0FDPBF features: (1)Fast: Optimized for medium operating frequencies (**5 kHz in hard switching, >*0kHz in resonant mode); (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO***0AB package; (5)Lead-Free.
| 国家: | Hong Kong |
| 型号: | IRG4BC30FDPBF |
| 离岸价格: | 获取最新报价 |
| 位置: | UNITED STATES |
| 最小订单价格: | - |
| 最小订单: | - |
| 包装细节: | Original packing(pack in tube, box) |
| 交货时间: | IN STOCK, SHIP WITHIN 1 DAY |
| 供应能力: | 8500 Piece per Month |
| 付款方式: | - |
| 產品組 : | Integrated Circuit(ICs) |
