China
联系人 lanny
1503 Room,Cyber Tower A,Tianan Cyber Park, Futian Dis, Shenzhen, China, Shenzhen, Guangdong
Package:TO***0/**0F
Vds:**0V
Id:4.0A
Rds:2.5ohm
PD:*0W
It can replace FQP4N*0(FS)
This power MOSFET is produced with advanced VDMOS technology of
SAMWIN. This technology enables power MOSFET to have better
characteristics, such as fast switching time, low on resistance,
low gate charge and especially excellent avalanche
characteristics.
This power Mosfet is usually used at high efficient DC to DC
converter block and switch mode power supply.
| 国家: | China |
| 型号: | Power MOSFET replaces FQP4N60 |
| 离岸价格: | ( Negotiable ) 获取最新报价 |
| 位置: | Shenzhen |
| 最小订单价格: | - |
| 最小订单: | - |
| 包装细节: | tape |
| 交货时间: | 15days |
| 供应能力: | - |
| 付款方式: | T/T, L/C |
| 產品組 : | - |
